1 for switching and af amplifier applications the transistor is subdivided into four groups o, y, p and l, according to its dc current gain. as complementary type the php transistor mmbtsa733 is recommended. absolute maximum ratings (t a = 25 ) parameter symbol value unit collector base voltage v cbo 60 v collector emitter voltage v ceo 50 v emitter base voltage v ebo 5 v collector current i c 150 ma power dissipation p tot 200 mw junction temperature t j 150 storage temperature range t s - 55 to + 150 characteristics at t a = 25 parameter symbol min. typ. max. unit dc current gain atv ce =6v,i c = 1 ma current gain group o y p l h fe 70 120 200 350 - 140 240 400 700 - collector base cutoff current atv cb =40v i cbo - - 0.1 a emitter base cutoff current atv eb =3v i ebo - - 0.1 a collector base breakdown voltage ati c = 100 a v (br)cbo 60 - - v collector emitter breakdown voltage ati c = 10 ma v (br)ceo 50 - - v emitter base breakdown voltage ati e = 10 a v (br)ebo 5 - - v collector emitter saturation voltage ati c =100ma,i b = 10 ma v ce(sat) - - 0.3 v gain bandwidth product atv ce =6v,i c = 10 ma f t - 300 - mhz output capacitance atv cb =6v,f=1mhz c ob - 2.5 - pf 1.base 2.emitter 3.collector sot-23 plastic package MMBTSC945 npn silicon epitaxial planar transistors website: www.kingtronics.com email: info@kingtronics.com tel: (852) 8106 7033 fax: (852) 8106 7099
2 ratings and characteristic curves MMBTSC945 note: specifications are subject to change without notice. website: www.kingtronics.com email: info@kingtronics.com tel: (852) 8106 7033 fax: (852) 8106 7099 MMBTSC945 npn silicon epitaxial planar transistors
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